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c-v characteristic in Chinese

Pronunciation:
How to pronounce "c-v characteristic""c-v characteristic" in a sentence

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  • 伏安特性

Examples

  • In the experiment of photo - excited c - v characteristics of sio2 / n - sic , a ledge that had been appeared in p - type sample was observed because of the deep interface states
    然后使用光照條件討論了p和n型sicmos的界面態(tài)的性質(zhì)，即p型為施主態(tài)， n型為受主態(tài)。
  • The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion . 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting
    6文章還對(duì)立方氨化硼薄膜的成核和生長(zhǎng)機(jī)理，氮化硼薄膜的n型摻雜機(jī)制和bn型）侶i …型）異質(zhì)結(jié)的電流輸運(yùn)機(jī)制進(jìn)行了探討。
  • It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling . the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
    當(dāng)氧化層中存在較強(qiáng)電場(chǎng)時(shí)，電離輻照對(duì)s匯mos電容的影響會(huì)更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。
  • A model of the interface state density distribution near by valence band is presented , and the dependence of the threshold voltage on temperature , the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics , transfer characteristics and effective mobility of sic pmosfets are analyzed . thirdly , the output characteristics and the drain breakdown characteristics are modeled with the procedure medici . the output characteristics in the room temperature and 300 ? are simulated , and the effects of gate voltage . contact resistance , interface state and other factors on sic pmos drain breakdown characteristics are analyzed
    提出了一個(gè)價(jià)帶附近的界面態(tài)分布模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關(guān)系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對(duì)sicpmos器件輸出特性、轉(zhuǎn)移特性以及有效遷移率的影響；論文中用模擬軟件medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時(shí)sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態(tài)以及其他因素對(duì)sicpmos擊穿特性的影響。
  • In this paper , the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials . the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
    本文就sio _ 2 / sic界面質(zhì)量對(duì)n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結(jié)構(gòu)出發(fā)分析了碳化硅材料中雜質(zhì)的不完全離化，采用sicmos反型層薄層電荷數(shù)值模型，研究了雜質(zhì)不完全離化對(duì)p型6h - sicmosc - v特性的影響。
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